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Superconducting tantalum disulfide nanotapes; growth, structure and stoichiometry

Dunnill, CW; MacLaren, I; Gregory, DH; (2010) Superconducting tantalum disulfide nanotapes; growth, structure and stoichiometry. NANOSCALE , 2 (1) 90 - 97. 10.1039/b9nr00224c.

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Superconducting tantalum disulfide nanowires have been synthesised by surface-assisted chemical vapour transport (SACVT) methods and their crystal structure, morphology and stoichiometry studied by powder X-ray diffraction (PXD), scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and nanodiffraction. The evolution of morphology, stoichiometry and structure of materials grown by SACVT methods in the Ta-S system with reaction temperature was investigated systematically. High-aspect-ratio, superconducting disulfide nanowires are produced at intermediate reaction temperatures (650 degrees C). The superconducting wires are single crystalline, adopt the 2H polytypic structure (hexagonal space group P6(3)/mmc: a = 3.32(2) angstrom, c = 12.159(2) angstrom; c/a = 3.66) and grow in the <2<(1)over bar>(1) over bar0> direction. The nanowires are of rectangular cross-section forming nanotapes composed of bundles of much smaller fibres that grow cooperatively. At lower reaction temperatures nanowires close to a composition of TaS3 are produced whereas elevated temperatures yield platelets of 1T TaS2.

Type: Article
Title: Superconducting tantalum disulfide nanotapes; growth, structure and stoichiometry
DOI: 10.1039/b9nr00224c
URI: http://discovery.ucl.ac.uk/id/eprint/67990
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