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1.3 mu m InAsP quantum well lasers grown by solid source MBE

Mottahedeh, R; Haywood, SK; Woodbridge, K; Hopkinson, M; Hill, G; Rivers, A; (1998) 1.3 mu m InAsP quantum well lasers grown by solid source MBE. IEE P-OPTOELECTRON , 145 (1) 3 - 6.

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Abstract

The authors report the design, growth and optical properties of InAsP/InGaAsP and InAsP/InGaP lasers with compressively-strained quantum wells, Both tensile-strained and lattice-matched quaternary barriers were investigated. Strain-compensated structures, i.e. those with tensile-strained barriers, show narrow photoluminescence and X-ray diffraction linewidths indicating high crystalline quality. These devices were subsequently processed into ridge waveguide lasers and a threshold current of similar to 1 kA/cm(2) was obtained for a strain-compensated five well structure.

Type: Article
Title: 1.3 mu m InAsP quantum well lasers grown by solid source MBE
Keywords: quantum well lasers, solid source MBE, quaternary barriers, MOLECULAR-BEAM EPITAXY, HIGH-TEMPERATURE OPERATION, M WAVELENGTH
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/64826
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