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Nucleation and Growth of GaAs on Si

Woodbridge, K; Gowers, JP; Fewser, PF; (1987) Nucleation and Growth of GaAs on Si. In: (Proceedings) 4th European Molecular Beam Epitaxy Workshop.

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Abstract

Les Diablerets, Switzerland, 30 March-1 April 1987.

Type: Proceedings paper
Title: Nucleation and Growth of GaAs on Si
Event: 4th European Molecular Beam Epitaxy Workshop
Dates: 30 March 1987 - 01 April 1987
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/64795
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