Woodbridge, K;
Gowers, JP;
Fewster, PF;
Dawson, P;
Moore, KJ;
Roberts, C;
(1989)
Structural and Optical Properties of III-V Quantum Wells grown on Si.
In:
(pp. pp. 337-340).
American Vacuum Society: New York, US.
Abstract
We have studied the structural and optical properties of GaAs/AlGaAs multiple quantum well structures (MQW’s) grown on Si for a range of different types of buffer layer with special reference to the effects of strained layer superlattices and thermal annealing on material quality. Layers were analyzed by in situ reflection high‐energy electron diffraction and ex situ transmission electron microscopy, x‐ray diffraction (XRD), and photoluminescence. Considerable improvement in structural quality of MQW layers was found when (001) substrates tilted towards [110] were used and this appears to be due entirely to elimination of antiphase domains since threading dislocation densities are still quite high. GaAs/InAs strained layer superlattices seem to have a considerable effect on the line direction of threading dislocations presumably due to the strong strain field associated with this structure. XRD diffraction profiles of GaAs/AlGaAs MQW samples show large numbers of satellite peaks indicating good uniformity and periodicity similar to that obtained with MQW’s on GaAs. Using a combination of strained layer superlattice buffers and annealing in these samples, we have obtained 300‐K photoluminescence efficiencies comparable to high quality MQW samples grown on GaAs. We have been able to use the photoluminescence decay technique to measure minority carrier lifetimes on some of these samples and values of ∼3 ns have currently been obtained. These results are discussed in relation to the improvement in structural quality observed.
| Type: | Proceedings paper |
|---|---|
| Title: | Structural and Optical Properties of III-V Quantum Wells grown on Si |
| DOI: | 10.1116/1.584745 |
| Publisher version: | http://dx.doi.org/10.1116/1.584745 |
| UCL classification: | UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | http://discovery.ucl.ac.uk/id/eprint/64778 |
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