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Optical properties of single and double (111)-grown (Ga,In)As-GaAs strained layer quantum wells under strong photo-injection

Boring, P; Moore, KJ; Gil, B; Woodbridge, K; (1993) Optical properties of single and double (111)-grown (Ga,In)As-GaAs strained layer quantum wells under strong photo-injection. In: (Proceedings) 3rd International Conference on Optics of Excitons in Confined Systems.

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Abstract

Montpellier, 30 August - 2 September 1993.

Type: Proceedings paper
Title: Optical properties of single and double (111)-grown (Ga,In)As-GaAs strained layer quantum wells under strong photo-injection
Event: 3rd International Conference on Optics of Excitons in Confined Systems
Dates: 30 August 1993 - 02 September 1993
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/64765
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