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CATHODOLUMINESCENCE OF STRAINED AND RELAXED GAAS/ALGAAS P-I-N MULTIQUANTUM-WELL STRUCTURES ON PATTERNED SI SUBSTRATES

NORMAN, CE; MURRAY, R; WOODBRIDGE, K; (1993) CATHODOLUMINESCENCE OF STRAINED AND RELAXED GAAS/ALGAAS P-I-N MULTIQUANTUM-WELL STRUCTURES ON PATTERNED SI SUBSTRATES. In: Cullis, AG and StatonBevan, AE and Hutchison, JL, (eds.) MICROSCOPY OF SEMICONDUCTING MATERIALS 1993. (pp. 651 - 654). IOP PUBLISHING LTD

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Abstract

Optical emission from MBE-grown AlCaAs/GaAs/Si p-i-n MQW optical modulator structures has been studied using low temperature cathodoluminescence. Growth on patterned Si substrates reduces the degree of microcracking, with microcracks occurring only in the larger islands. The emission energy of the MQW varies with island size and significant strain relaxation has been seen within a few mu m of microcracks and island edges. Monochromatic CL imaging successfully reveals relaxed regions near both microcracks and island edges. These results suggest the possibility of virtually strain-free devices on islands below approximate to 10 mu m in diameter.

Type: Proceedings paper
Title: CATHODOLUMINESCENCE OF STRAINED AND RELAXED GAAS/ALGAAS P-I-N MULTIQUANTUM-WELL STRUCTURES ON PATTERNED SI SUBSTRATES
Event: 8th Royal-Microscopical-Society Conference: Microscopy of Semiconducting Materials 1993 (MSM VIII)
Location: OXFORD UNIV, OXFORD, ENGLAND
Dates: 1993-04-05 - 1993-04-08
ISBN: 0-7503-0290-9
Keywords: STRESS VARIATIONS, GAAS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/64762
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