UCL logo

UCL Discovery

UCL home » Library Services » Electronic resources » UCL Discovery

GaAs multiple quantum well microresonator modulators grown on silicon substrates

Barnes, P; Woodbridge, K; Roberts, C; Stride, AA; Rivers, A; Whitehead, M; Parry, G; ... Button, C; + view all (1992) GaAs multiple quantum well microresonator modulators grown on silicon substrates. Optical and Quantum Electronics , 24 (2) 10.1007/BF00625823.

Full text not available from this repository.

Abstract

We report new results on the modulation characteristics of GaAs/AlGaAs asymmetric Fabry-Perot modulators grown on silicon substrates. We discuss factors affecting device performance and evaluate these by growing p-i-n quantum well diodes, and multilayer reflector stacks on silicon. Using data from these test structures we have designed an asymmetric microresonator modulator and achieve, experimentally, a 40% reflection change with only 5 V and a contrast ratio of 7.4 dB, also with 5 V. © 1992 Chapman & Hall.

Type: Article
Title: GaAs multiple quantum well microresonator modulators grown on silicon substrates
DOI: 10.1007/BF00625823
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/64750
Downloads since deposit
0Downloads
Download activity - last month
Download activity - last 12 months
Downloads by country - last 12 months

Archive Staff Only

View Item View Item