Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study.
Journal of Crystal growth
239 - 245.
|Title:||Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering|
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