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Exciton binding energies and photo-induced tunnelling of carriers in (Ga,In)As-GaAs heterostructures grown with built-in piezoelectric field

Bigenwald, P; Boring, M; K J, G; B, W; K, ; (1994) Exciton binding energies and photo-induced tunnelling of carriers in (Ga,In)As-GaAs heterostructures grown with built-in piezoelectric field. Journal de Physique IV , 4 215 - 223.

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Type: Article
Title: Exciton binding energies and photo-induced tunnelling of carriers in (Ga,In)As-GaAs heterostructures grown with built-in piezoelectric field
UCL classification: UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
URI: http://discovery.ucl.ac.uk/id/eprint/64741
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