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HIGH REFLECTIVITY AND LOW-RESISTANCE 1.55-MU-M AL0.65IN0.35AS/GA0.63IN0.37AS STRAINED QUARTER-WAVE BRAGG REFLECTOR STACK

GUY, P; WOODBRIDGE, K; HOPKINSON, M; (1993) HIGH REFLECTIVITY AND LOW-RESISTANCE 1.55-MU-M AL0.65IN0.35AS/GA0.63IN0.37AS STRAINED QUARTER-WAVE BRAGG REFLECTOR STACK. ELECTRON LETT , 29 (22) 1947 - 1948.

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Abstract

Reflector stacks grown for use in devices operating at 1.55mum on InP substrates normally use lattice matched quaternary alloys and a large number of periods to obtain a high reflectivity. In this work therefore we have investigated the use of Al0.65In0.35As/Ga0.63In0.37As ternary layers, which are approximately1% strained with respect to the substrate. Results show that over 80% reflectivity and a low resistance can be obtained with only a 12 period structure.

Type: Article
Title: HIGH REFLECTIVITY AND LOW-RESISTANCE 1.55-MU-M AL0.65IN0.35AS/GA0.63IN0.37AS STRAINED QUARTER-WAVE BRAGG REFLECTOR STACK
Keywords: DISTRIBUTED BRAGG REFLECTOR LASERS, SEMICONDUCTOR LASERS, QUATERNARY ALLOYS, MODULATOR, INP, ELECTROREFLECTANCE, IN1-XGAXASYP1-Y
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/64739
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