UCL logo

UCL Discovery

UCL home » Library Services » Electronic resources » UCL Discovery

GaAs / AlGaAs pin MQW structures grown on patterned Si substrates

Woodbridge, K; Barnes, P; Murray, R; Roberts, C; Parry, G; (1993) GaAs / AlGaAs pin MQW structures grown on patterned Si substrates. Journal of Crystal Growth , 127 (1-4) pp. 112-115. 10.1016/0022-0248(93)90588-N.

Full text not available from this repository.

Abstract

We report structural and optical studies of a pin MQW structure grown on a patterned Si substrate. We find that a high density of microcracks in the <110> directions are formed on the plain area of the substrate but that these are almost totally absent on the patterned areas. Photoluminescence measurements show a shift of QW emission to higher energies as island size is reduced with little change in intensity. These results show that good quality MQW device structures with reduced strain and freedom from microcracks can be grown on patterned Si. © 1993.

Type: Article
Title: GaAs / AlGaAs pin MQW structures grown on patterned Si substrates
DOI: 10.1016/0022-0248(93)90588-N
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/64737
Downloads since deposit
0Downloads
Download activity - last month
Download activity - last 12 months
Downloads by country - last 12 months

Archive Staff Only

View Item View Item