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Photoluminescence Decay Times in Multiple Quantum Well Heterostructures prepared by Molecular Beam Epitaxy

Dawson, P; Duggan, G; Ralph, HI; Woodbridge, K; (1985) Photoluminescence Decay Times in Multiple Quantum Well Heterostructures prepared by Molecular Beam Epitaxy. In: Chadi, JD and Harrison, WA, (eds.) (pp. pp. 551-554). Springer-Verlag: New York, US.

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Abstract

We have studied the photoluminescence decay rate from GaAs-(AlGa)As quantum well (QW) samples grown by molecular beam expitaxy. Measurements are reported for the range 4-295K. Additional measurements on the luminescence efficiency of (AlGa)As single layers leads us to conclude that the room temperature lifetime in the quantum wells is limited by the optical quality of the barrier material. Decay measurements at 4K are given an interpretation different from those previously published.

Type: Proceedings paper
Title: Photoluminescence Decay Times in Multiple Quantum Well Heterostructures prepared by Molecular Beam Epitaxy
ISBN: 0387961089
Publisher version: http://www.springer.com/
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Engineering Science
URI: http://discovery.ucl.ac.uk/id/eprint/64703
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