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HIGHLY DOPED 1.55-MU-M GAXIN1-XAS/INP DISTRIBUTED-BRAGG-REFLECTOR STACKS

GUY, P; WOODBRIDGE, K; HAYWOOD, SK; HOPKINSON, M; (1994) HIGHLY DOPED 1.55-MU-M GAXIN1-XAS/INP DISTRIBUTED-BRAGG-REFLECTOR STACKS. ELECTRON LETT , 30 (18) 1526 - 1527.

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Abstract

The authors have investigated 20 period lattice matched mirror stacks doped to 5 X 10(18)cm(-1) and 10(19)cm(-1) at 1.55 mu m in Ga(x)In(1-x)AS/InP and have obtained greater than 95% reflectivity over 100nm and peak reflectivities up to 98%.

Type:Article
Title:HIGHLY DOPED 1.55-MU-M GAXIN1-XAS/INP DISTRIBUTED-BRAGG-REFLECTOR STACKS
Keywords:DISTRIBUTED BRAGG REFLECTOR LASERS, GALLIUM INDIUM ARSENIDE, INDIUM PHOSPHIDE, REFLECTION MODULATORS, MU-M WAVELENGTH, HIGH-CONTRAST, MODULATOR, VOLTAGE, MIRROR
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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