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Lattice dilatation of boron in silicon

Stoneham, AM; (1979) Lattice dilatation of boron in silicon. Physics Letters A , 70 (1) 55 - 56. 10.1016/0375-9601(79)90326-8. Green open access

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Abstract

Recent data on laser-annealed, boron-implanted silicon are analysed, and the results compared with earlier experiments and simple theory. Each substitutional boron decreases the total volume by about 90% of the volume per silicon atom in the perfect crystal.

Type: Article
Title: Lattice dilatation of boron in silicon
Open access status: An open access version is available from UCL Discovery
DOI: 10.1016/0375-9601(79)90326-8
Publisher version: http://dx.doi.org/10.1016/0375-9601(79)90326-8
Language: English
Additional information: Text made available to UCL Discovery by kind permission of Elsevier B.V., 2012
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/59765
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