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QUENCHING OF LUMINESCENCE IN SEMICONDUCTORS BY CHARGED DEFECTS

TASKER, PW; STONEHAM, AM; (1977) QUENCHING OF LUMINESCENCE IN SEMICONDUCTORS BY CHARGED DEFECTS. J PHYS C SOLID STATE , 10 (24) 5131 - 5140. 10.1088/0022-3719/10/24/030. Green open access

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Abstract

Charged point defects and dislocations create internal electric fields that can prevent the binding of carriers to luminescent centres such as N in GaP. The authors calculate the distribution of fields present in a semiconductor and its effect on the lifetime of an electron trapped at a localised impurity. The results show a decrease in the fraction of effective luminescent centres with increasing concentration of ionised donors and acceptors. Both unscreened dislocations and those with a compensating atmosphere of oppositely charged point defects are considered and the calculations show dark regions around them, as observed.

Type: Article
Title: QUENCHING OF LUMINESCENCE IN SEMICONDUCTORS BY CHARGED DEFECTS
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0022-3719/10/24/030
Publisher version: http://dx.doi.org/10.1088/0022-3719/10/24/030
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/59755
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