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LATTICE DISTORTION NEAR VACANCIES IN DIAMOND AND SILICON .1.

LARKINS, FP; STONEHAM, AM; (1971) LATTICE DISTORTION NEAR VACANCIES IN DIAMOND AND SILICON .1. J PHYS PART C SOLID , 4 (2) 143 -153. 10.1088/0022-3719/4/2/002. Green open access

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Abstract

A dynamical relaxation procedure, coupled with a valence force potential, has been used to calculate the distortion around point defects in a diamond-type crystal. The method has been applied to the vacancy in diamond and silicon. The response of the lattice to symmetrized forces on the nearest neighbours to the vacancy was calculated. The results can be used in estimates of point defect properties which depend on lattice distortion, including the jahn-teller effect, and formation energies. The ratios of the atomic displacements under uniform external stresses for the perfect lattice and for the lattice with a vacancy are also determined.

Type: Article
Title: LATTICE DISTORTION NEAR VACANCIES IN DIAMOND AND SILICON .1.
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0022-3719/4/2/002
Publisher version: http://dx.doi.org/10.1088/0022-3719/4/2/002
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/59722
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