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PHONON COUPLING AND PHOTOIONIZATION CROSS-SECTIONS IN SEMICONDUCTORS

STONEHAM, AM; (1979) PHONON COUPLING AND PHOTOIONIZATION CROSS-SECTIONS IN SEMICONDUCTORS. J PHYS C SOLID STATE , 12 (5) 891 - 897. 10.1088/0022-3719/12/5/018. Green open access

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Abstract

The coupling to lattice vibrations affects the photoionisation spectra of defects in semiconductors. This is especially important for deep defects. The effects are characterised mainly by a Huang-Rhys factor S0 and by a spectral moment. These are calculated for a variety of electron-photon coupling mechanisms as a function of the observable ionisation energy EI rather than the unobservable effective radius used by previous workers. For Frohlich coupling a good approximation for the Huang-Rhys factor is S0(x)/S0(0)=X/ square root ((5+x)/6) with x=EI/(effective Ryd for purely hydrogenic centre).

Type: Article
Title: PHONON COUPLING AND PHOTOIONIZATION CROSS-SECTIONS IN SEMICONDUCTORS
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0022-3719/12/5/018
Publisher version: http://dx.doi.org/10.1088/0022-3719/12/5/018
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/59700
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