HAGON, JP;
JAROS, M;
STONEHAM, AM;
(1985)
ELECTRONIC STRUCTURE OF GE IN SIO2.
J PHYS C SOLID STATE
, 18
(25)
4957 - 4962.
10.1088/0022-3719/18/25/014.
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Abstract
It is argued that one-electron theory is insufficient to account for the origin of the observed spectra of Ge in SiO2 ( alpha -quartz) crystals. A simple model is employed to show that impurity states responsible for ESR spectra of SiO2:Ge are stabilised by many-electron polarisation effects associated with the Ge atom itself and its immediate oxygen neighbours
| Type: | Article |
|---|---|
| Title: | ELECTRONIC STRUCTURE OF GE IN SIO2 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0022-3719/18/25/014 |
| Publisher version: | http://dx.doi.org/10.1088/0022-3719/18/25/014 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/59667 |
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