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2-LEVEL SYSTEMS - A POSSIBLE STRUCTURE AND ITS ROLE IN AMORPHIZATION

TORRES, VJB; MASRI, PM; STONEHAM, AM; (1987) 2-LEVEL SYSTEMS - A POSSIBLE STRUCTURE AND ITS ROLE IN AMORPHIZATION. J PHYS C SOLID STATE , 20 (10) L143 - L146. 10.1088/0022-3719/20/10/001. Green open access

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Abstract

The authors show that a particular interstitial structure in c-Si has both ring structures characteristic of a-Si and low-energy excitations of a tunneling type and a bond-switch (soliton) type. These excitations exist for reasons of symmetry not because of anomalous bond angles or lengths. They suggest these defects may act as nuclei for amorphisation under irradiation and offer a possible explanation of the observed relation between tunneling level systems and the extent of amorphisation in quartz.

Type: Article
Title: 2-LEVEL SYSTEMS - A POSSIBLE STRUCTURE AND ITS ROLE IN AMORPHIZATION
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0022-3719/20/10/001
Publisher version: http://dx.doi.org/10.1088/0022-3719/20/10/001
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/59659
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