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LOCAL DISTORTIONS AND VOLUME CHANGES IN SEMICONDUCTORS - DONORS IN SILICON

STONEHAM, AM; PAJOT, B; SCHOBER, HR; (1988) LOCAL DISTORTIONS AND VOLUME CHANGES IN SEMICONDUCTORS - DONORS IN SILICON. J PHYS C SOLID STATE , 21 (26) 4687 - 4692. 10.1088/0022-3719/21/26/016. Green open access

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Abstract

Experiments giving impurity-induced lattice distortion can measure quite distinct quantities. In particular EXAFS (extended X-ray fine structure) measures nearest-neighbour distances, whereas both volume changes and recent spectroscopic data measure long-range displacements. The relationship between the two depends strongly on the inter-atomic potential. The authors analyse this for impurities in silicon by adopting a variety of current potentials. There is a significant contradiction between the EXAFS results and the other experiments for all of the inter-atomic potentials. This problem may be associated with the high oxygen concentrations of Czochralski crystals used in the EXAFS study.

Type: Article
Title: LOCAL DISTORTIONS AND VOLUME CHANGES IN SEMICONDUCTORS - DONORS IN SILICON
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0022-3719/21/26/016
Publisher version: http://dx.doi.org/10.1088/0022-3719/21/26/016
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/59650
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