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Excitonic model of track registration of energetic heavy ions in insulators

Itoh, N; Stoneham, AM; (1998) Excitonic model of track registration of energetic heavy ions in insulators. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 146 (1-4) 362 - 366. 10.1016/S0168-583X(98)00448-0. Green open access

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Abstract

The consequence of generation of dense electronic excitation along the paths of energetic heavy ions is discussed, emphasizing the fates of electron-hole pairs. It is pointed out that a substantial part of the energy imparted to electron-hole pairs in the materials in which excitons are self-trapped is converted directly to defect formation energy but do not contribute to heating. However, the thermal spike model can be an appropriate macroscopic model of the track registration of the materials in which excitons are self-trapped, because energy deposited to the material remains along the ion paths. The energy imparted to electron-hole pairs is diffused away from the ion paths in the materials in which excitons are not self-trapped. This explains the reason why the critical stopping power for track registration is higher in these materials. The difficulty for application of the thermal spike model to these materials is pointed out and it is suggested that nominal defects in densely excited region nucleate fragmental tracks. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Type: Article
Title: Excitonic model of track registration of energetic heavy ions in insulators
Open access status: An open access version is available from UCL Discovery
DOI: 10.1016/S0168-583X(98)00448-0
Publisher version: http://dx.doi.org/10.1016/S0168-583X(98)00448-0
Language: English
Additional information: Text made available to UCL Discovery by kind permission of Elsevier B.V., 2012
Keywords: Swift heavy ion, radiation effects, electronic excitation, heavy-ion track, thermal spike, exciton, self-trapped exciton, amorphisation, defect cluster, ELECTRONIC EXCITATION, DAMAGE, OXIDES, SIO2, LIF
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/53152
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