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Intrinsic and doped μc-Si:H layers using 13.56 MHz PECVD at 250<sup>o</sup>C

Lee, C-H; Striakhilev, D; Nathan, A; (2004) Intrinsic and doped μc-Si:H layers using 13.56 MHz PECVD at 250<sup>o</sup>C. Materials Research Society Symposium Proceedings , 808

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Type: Article
Title: Intrinsic and doped μc-Si:H layers using 13.56 MHz PECVD at 250<sup>o</sup>C
UCL classification: UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/42748
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