Lee, C-H and Striakhilev, D and Nathan, A (2004) Intrinsic and doped μc-Si:H layers using 13.56 MHz PECVD at 250<sup>o</sup>C. Materials Research Society Symposium Proceedings , 808
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| Type: | Article |
|---|---|
| Title: | Intrinsic and doped μc-Si:H layers using 13.56 MHz PECVD at 250<sup>o</sup>C |
| UCL classification: | UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
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