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Electrical characterization of photo-oxidized Si Ge C films

Bjeletich, PJ; Peterson, JJ; Hunt, CE; Cuadras, Á; Fang, Q; Zhang, J-Y; Boyd, IW; (2004) Electrical characterization of photo-oxidized Si Ge C films. Microelectronic Engineering , 72 (1-4) 218 - 222. 10.1016/j.mee.2003.12.040.

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Strained silicon germanium carbon (SiGeC or SiGeC) on silicon was oxidized using a novel photo-oxidation process. The growth rate of the oxide was investigated and found to depend heavily on the germanium and carbon concentrations. MOS capacitors were fabricated with the resulting oxide and electrical characterization was done. The SiGeC MOS capacitors proved to have high leakage current through the gate oxide. The leakage current was found to be highly dependent on carbon concentration, and to a lesser degree, on germanium concentration, as well. Fixed oxide charge and interface state density were found to increase by a factor of ten over photo-oxidized silicon. © 2004 Published by Elsevier B.V.

Type: Article
Title: Electrical characterization of photo-oxidized Si Ge C films
DOI: 10.1016/j.mee.2003.12.040
UCL classification: UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/42161
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