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Electrical characterization of photo-oxidized Si 1-x-y Ge xCy films.
Strained silicon germanium carbon (Si1-x-yGexC y or SiGeC) on silicon was oxidized using a novel photo-oxidation process. The growth rate of the oxide was investigated and found to depend heavily on the germanium and carbon concentrations. MOS capacitors were fabricated with the resulting oxide and electrical characterization was done. The SiGeC MOS capacitors proved to have high leakage current through the gate oxide. The leakage current was found to be highly dependent on carbon concentration, and to a lesser degree, on germanium concentration, as well. Fixed oxide charge and interface state density were found to increase by a factor of ten over photo-oxidized silicon. © 2004 Published by Elsevier B.V.
|Title:||Electrical characterization of photo-oxidized Si 1-x-y Ge xCy films|
|Keywords:||β-SiC formation, Ge segregation, Interface state density, Leakage current, MOS capacitors, Oxidation kinetics, Photo-oxidation, Silicon germanium (SiGe), Silicon germanium carbon (SiGeC)|
|UCL classification:||UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
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