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Electrical characterization of photo-oxidized Si1-x-yGexCy films

Bjeletich, PJ; Peterson, JJ; Cuadras, A; Fang, Q; Zhang, JY; Robinson, M; Boyd, IW; (2004) Electrical characterization of photo-oxidized Si1-x-yGexCy films. MICROELECTRONIC ENGINEERING , 72 (1-4) pp. 218-222. 10.1016/j.mee.2003.12.040.

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Type: Article
Title: Electrical characterization of photo-oxidized Si1-x-yGexCy films
Location: Barcelona, SPAIN
DOI: 10.1016/j.mee.2003.12.040
Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Optics, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, NANOSCIENCE & NANOTECHNOLOGY, OPTICS, PHYSICS, APPLIED, silicon germanium carbon (SiGeC), silicon germanium (SiGe), beta-SiC formation, Ge segregation, photo-oxidation, oxidation kinetics, MOS capacitors, leakage current, interface state density, LOW-TEMPERATURE OXIDATION, BIPOLAR-TRANSISTORS, ALLOY LAYERS, CARBON, SIGE, HETEROSTRUCTURES, KINETICS, SI(001), GROWTH, OXYGEN
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/42161
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