Excimer UV-assisted preparation of zirconium silicate layers.
Thin Solid Films
UV exposure of zirconium sol-gel layers on Si with 5, 15, 25 at.% Zr at 400 °C in O2 for 20 min has led to the formation of high quality Zr silicate layers exhibiting low-leakage current densities of 3×10 -5 A/cm2 at 1 MV/cm for the 5% Zr layers, and even lower values of 9×10-7 and 2×10-7 A/cm2 for the 15 and 25% Zr silicate layers, respectively. Annealing of these UV irradiated samples for 30 s at 1050 °C in a N2 gas flow did not cause significant changes in leakage current density at biases up to 0.7 MV/cm. The formation of Si-O-Zr bonds led to a shift of the Si-O stretching vibration towards lower wavenumbers from 1050 to 1016/cm. X-ray diffraction analyses showed that these Zr silicate layers assumed an amorphous structure after UV exposure at 400 °C, and remained amorphous and stable following the high-temperature annealing at 1050 °C without separating into phases of crystalline ZrO2 and SiO2. © 2003 Elsevier B.V. All rights reserved.
|Title:||Excimer UV-assisted preparation of zirconium silicate layers|
|Keywords:||Excimer lamps, Photon processing, Silicate, Sol-gel processing, Zirconium|
|UCL classification:||UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
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