Pressure-induced transformations and superconductivity of amorphous germanium.
PHYS REV B
, Article 020507. 10.1103/PhysRevB.82.020507.
The effect of pressure on amorphous Ge was probed by Raman spectroscopy combined with molecular-dynamics simulations. A large jump occurs in the principal peak position due to nearest-neighbor Ge-Ge vibrations at 11-12 GPa and 7-5.5 GPa, respectively, during increasing/decreasing pressure due to a polyamorphic transition occurring between the low-density amorphous semiconductor and a metallic high-density polyamorph (HDA). We measured the superconducting transition temperature (T-c) using magnetic susceptibility measurements in the diamond anvil cell and determined that T-c for the high-density HDA polyamorph was higher than that for the beta-Sn structured Ge-II crystalline phase.
|Title:||Pressure-induced transformations and superconductivity of amorphous germanium|
|Keywords:||PHASE-TRANSITION, SYNCHROTRON-RADIATION, CRYSTAL STRUCTURES, RAMAN PHONONS, GE, SILICON, SI, TEMPERATURE, DYNAMICS, LIQUID|
|UCL classification:||UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry|
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