Light-induced metastability in thin nanocrystalline silicon films.
This paper examines the influence of light-induced metastability on conduction in thin nc-Si:H films. To investigate the role of surface effects, two sample types are considered: one with the surface intentionally oxidized to form an oxide cap layer and the other with etched oxide layer. Both the Staebler-Wronski effect (SWE) and persistent photo-current (PPC) have been observed, albeit at different phases of light soaking. For the nc-Si:H sample with a cap layer, we attribute the presence of SWE and PPC to defect generation and interface charge trapping, while, in the absence of the cap layer, these effects could be caused by unidentified photo-structural changes and defect generation.
|Title:||Light-induced metastability in thin nanocrystalline silicon films|
|Keywords:||nanocrystalline silicon, light soaking, persistent photo-current, Staebler-Wronski effect, HYDROGENATED AMORPHOUS-SILICON, MICROCRYSTALLINE SI FILMS, PERSISTENT PHOTOCONDUCTIVITY, BEHAVIOR|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science
UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
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