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Low temperature Si and SiGe oxidation through dielectric barrier discharges

Yu, JJ; Boyd, IW; (2004) Low temperature Si and SiGe oxidation through dielectric barrier discharges. THIN SOLID FILMS , 453 pp. 63-66. 10.1016/j.tsf.2003.11.077.

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Type: Article
Title: Low temperature Si and SiGe oxidation through dielectric barrier discharges
Location: Strasbourg, FRANCE
DOI: 10.1016/j.tsf.2003.11.077
Keywords: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, MATERIALS SCIENCE, COATINGS & FILMS, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, SiGe, oxidation, silicon dioxide, excimer lamps, gate dielectrics, SILICON, MOBILITY, LAYERS, FILMS
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/39479
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