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Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation

Craciun, V; Boyd, IW; Hutton, B; Williams, D; (1999) Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation. Applied Physics Letters , 75 (9) pp. 1261-1263. 10.1063/1.124661.

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Abstract

Photoassisted oxidation with vacuum ultraviolet radiation was used to produce thin dielectric layers on Ge samples at temperatures lower than 450 °C. It was observed that the dielectric layers thicken as they are exposed to higher processing temperatures and longer oxidation time. The dielectric layers are primarily composed of stoichiometric GeO2. Those that were exposed to ultraviolet radiation for short periods of time also feature several nanometer-thick substoichiometric oxide layer at their interface region. It was noted that dielectric layers which a thickness of over 15 nm have good electrical characteristics.

Type: Article
Title: Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation
DOI: 10.1063/1.124661
URI: http://discovery.ucl.ac.uk/id/eprint/188711
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