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Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation

Craciun, V; Boyd, IW; Hutton, B; Williams, D; (1999) Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation. Applied Physics Letters , 75 (9) pp. 1261-1263.

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Abstract

Photoassisted oxidation with vacuum ultraviolet radiation was used to produce thin dielectric layers on Ge samples at temperatures lower than 450 °C. It was observed that the dielectric layers thicken as they are exposed to higher processing temperatures and longer oxidation time. The dielectric layers are primarily composed of stoichiometric GeO 2 . Those that were exposed to ultraviolet radiation for short periods of time also feature several nanometer-thick substoichiometric oxide layer at their interface region. It was noted that dielectric layers which a thickness of over 15 nm have good electrical characteristics.

Type: Article
Title: Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/188711
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