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Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy

Koerber, C; Krishnakumar, V; Klein, A; Panaccione, G; Torelli, P; Walsh, A; Da Silva, JLF; (2010) Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy. PHYSICAL REVIEW B , 81 (16) 10.1103/PhysRevB.81.165207.

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Type: Article
Title: Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy
DOI: 10.1103/PhysRevB.81.165207
Keywords: Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, PHOTOELECTRON ANGULAR-DISTRIBUTION, TRANSPARENT CONDUCTING OXIDES, TOTAL-ENERGY CALCULATIONS, INDIUM-TIN-OXIDE, WAVE BASIS-SET, OPTICAL-PROPERTIES, VOLPE PROJECT, TIN(IV) OXIDE, SURFACE, PARAMETERS
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
URI: http://discovery.ucl.ac.uk/id/eprint/170292
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