Ruess, FJ and Oberbeck, L and Simmons, MY and Goh, KEJ and Hamilton, AR and Hallam, T and Schofield, SR and Curson, NJ and Clark, RG (2004) Toward atomic-scale device fabrication in silicon using scanning probe microscopy. NANO LETT , 4 (10) 1969 - 1973. 10.1021/nl048808v.
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We present a complete fabrication process for the creation of robust nano-and atomic-scale devices in silicon using a scanning tunneling microscope (STM). In particular we develop registration markers which, in combination with a custom-designed STM-scanning electron microscope (SEM) system, solve one of the key fabrication problems - connecting the STM-patterned buried phosphorus-doped devices, fabricated in the ultrahigh vacuum environment, to the outside world. The first devices demonstrate the feasibility of this technology and confirm the presence of quantum confinement in devices as electron propagation is laterally constricted by STM patterning.
|Title:||Toward atomic-scale device fabrication in silicon using scanning probe microscopy|
|Keywords:||TUNNELING MICROSCOPE, QUANTUM COMPUTER, STM LITHOGRAPHY, SI(100), LAYERS|
|UCL classification:||UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology|
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