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Toward atomic-scale device fabrication in silicon using scanning probe microscopy

Ruess, FJ; Oberbeck, L; Simmons, MY; Goh, KEJ; Hamilton, AR; Hallam, T; Schofield, SR; (2004) Toward atomic-scale device fabrication in silicon using scanning probe microscopy. NANO LETT , 4 (10) 1969 - 1973. 10.1021/nl048808v.

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Abstract

We present a complete fabrication process for the creation of robust nano-and atomic-scale devices in silicon using a scanning tunneling microscope (STM). In particular we develop registration markers which, in combination with a custom-designed STM-scanning electron microscope (SEM) system, solve one of the key fabrication problems - connecting the STM-patterned buried phosphorus-doped devices, fabricated in the ultrahigh vacuum environment, to the outside world. The first devices demonstrate the feasibility of this technology and confirm the presence of quantum confinement in devices as electron propagation is laterally constricted by STM patterning.

Type: Article
Title: Toward atomic-scale device fabrication in silicon using scanning probe microscopy
DOI: 10.1021/nl048808v
Keywords: TUNNELING MICROSCOPE, QUANTUM COMPUTER, STM LITHOGRAPHY, SI(100), LAYERS
UCL classification: UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/170062
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