Self-consistent calculations for shallow defects in semiconductors: II. Donor-acceptor pairs.
J PHYS C SOLID STATE
1109 - 1118.
For pt.I see ibid., vol.8, 1102 (1975). A general method has been developed for performing self-consistent calculations for shallow defects or defect complexes in semiconductors. Results are given here for donor-acceptor pairs in GaP and a comparison is made of the various treatments of central-cell corrections and the effects arising from the overlap of the donor and acceptor wavefunctions. Whilst no detailed refitting of host parameters is attempted, it seems likely that the current estimate of the band gap (2.339 eV) is too large, and the latest estimates of the dielectric constant may also be inaccurate.
|Title:||Self-consistent calculations for shallow defects in semiconductors: II. Donor-acceptor pairs|
|Open access status:||An open access version is available from UCL Discovery|
|Additional information:||Text made available to UCL Discovery by kind permission of IOP Publishing, 2012|
|UCL classification:||UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology|
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