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Self-consistent calculations for shallow defects in semiconductors: II. Donor-acceptor pairs

STONEHAM, AM; HARKER, AH; (1975) Self-consistent calculations for shallow defects in semiconductors: II. Donor-acceptor pairs. J PHYS C SOLID STATE , 8 (8) 1109 - 1118. 10.1088/0022-3719/8/8/014. Green open access

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Abstract

For pt.I see ibid., vol.8, 1102 (1975). A general method has been developed for performing self-consistent calculations for shallow defects or defect complexes in semiconductors. Results are given here for donor-acceptor pairs in GaP and a comparison is made of the various treatments of central-cell corrections and the effects arising from the overlap of the donor and acceptor wavefunctions. Whilst no detailed refitting of host parameters is attempted, it seems likely that the current estimate of the band gap (2.339 eV) is too large, and the latest estimates of the dielectric constant may also be inaccurate.

Type: Article
Title: Self-consistent calculations for shallow defects in semiconductors: II. Donor-acceptor pairs
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0022-3719/8/8/014
Publisher version: http://dx.doi.org/10.1088/0022-3719/8/8/014
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/162622
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