Orchard, JR;
Woodhead, C;
Wu, J;
Tang, M;
Beanland, R;
Noori, Y;
Liu, H;
... Mowbray, DJ; + view all
(2017)
Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band.
ACS Photonics
, 4
(7)
pp. 1740-1746.
10.1021/acsphotonics.7b00276.
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Abstract
We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.
| Type: | Article |
|---|---|
| Title: | Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1021/acsphotonics.7b00276 |
| Publisher version: | http://dx.doi.org/10.1021/acsphotonics.7b00276 |
| Language: | English |
| Additional information: | This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. |
| Keywords: | C-band; GaAsSb; III−V semiconductors; quantum dots; Si substrate; single-photon sources |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1570277 |
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