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Conductance Tomography of Intrinsic SiOx RRAM Devices

Buckwell, M; Mehonic, A; Hudziak, S; Montesi, L; Kenyon, AJ; (2017) Conductance Tomography of Intrinsic SiOx RRAM Devices. Presented at: China RRAM 2017, Souzhou, China.

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Type: Conference item (Presentation)
Title: Conductance Tomography of Intrinsic SiOx RRAM Devices
Event: China RRAM 2017
Location: Souzhou, China
Dates: 12 June 2017 - 13 June 2017
Publisher version: http://www.chinarram.org/program/
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1560598
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