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Role of electron and hole injection in electroforming of SiO2 and HfO2 based RRAM cells

Gao, D; Strand, J; Mehonic, A; Kenyon, AJ; Shluger, A; (2017) Role of electron and hole injection in electroforming of SiO2 and HfO2 based RRAM cells. [Lecture]. Presented at: MEMRISYS 2017, Athens, Greece.

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Type: Conference item (Lecture)
Title: Role of electron and hole injection in electroforming of SiO2 and HfO2 based RRAM cells
Event: MEMRISYS 2017
Location: Athens, Greece
Dates: 03 April 2017 - 06 April 2017
Publisher version: https://memrisys2017.eventsadmin.com/Content/UPLOA...
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy
URI: http://discovery.ucl.ac.uk/id/eprint/1549302
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