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Enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth

Li, S; Jiang, Y; Wu, Z; Wu, J; Ying, Z; Wang, Z; Li, W; (2012) Enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 23 (1) pp. 224-228. 10.1007/s10854-011-0390-1.

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Abstract

Hydrogenated silicon film is fabricated by plasma enhanced chemical vapor deposition method, and the enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth is investigated. The thermal conductivity of films is measured based on Fourier thermal transmitting law by using platinum electrode. Raman spectroscopy characterization reveals the crystalline volume fraction (X (c)) of microcrystalline silicon (mu c-Si:H) and demonstrates it is embedded with nanocrystals. Spectroscopic ellipsometry with Forouhi-Bloomer model is used to obtain the thickness of films. The measurement results show that the thermal conductivity of mu c-Si:H is much higher than amorphous silicon (a-Si:H).

Type: Article
Title: Enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth
DOI: 10.1007/s10854-011-0390-1
Additional information: unique-id: ISI:000298970300032
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1547990
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