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Thermal etching process of microscale pits on the GaAs(001) surface

Li, S; Wu, J; Wang, Z; Li, Z; Su, Y; Wu, Z; Jiang, Y; (2012) Thermal etching process of microscale pits on the GaAs(001) surface. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS , 6 (1) pp. 25-27. 10.1002/pssr.201105482.

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Abstract

When a GaAs(001) substrate is heated up to 650 degrees C in a scanning electron microscope (SEM) vacuum chamber with vacuum range from 10(-4) Torr to 10(-5) Torr, real-time SEM observation reveals microscale pits on GaAs substrate surface. The annealing process of GaAs substrate in vacuum causes excess evaporation of arsenic and accumulation of gallium as liquid droplets on the surface. As the function of electrochemical drills, the gallium droplets etch away GaAs beneath the surface to make microscale holes on GaAs substrate. With small amount of oxygen in the chamber acting as etching catalyst, gallium droplets etch GaAs much faster than in ultra-high vacuum (UHV) MBE chamber. This process provides an easy technique to fabricate microscale pits on GaAs(001) surface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Type: Article
Title: Thermal etching process of microscale pits on the GaAs(001) surface
DOI: 10.1002/pssr.201105482
Additional information: unique-id: ISI:000300767500010
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1547985
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