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Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy

Wu, J; Wang, ZM; Li, S; Lee, J; Mazur, YI; Salamo, GJ; (2012) Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS , 6 (7) pp. 309-311. 10.1002/pssr.201206236.

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Abstract

We investigate the formation of GaAs quantum dash pairs with different coverages by droplet epitaxy. The GaAs quantum dash pairs of various sizes are fabricated by high temperature droplet epitaxy. Dual-sized quantum dash pairs are observed along $[01\textbackslashbar 1]$ orientation. Depending on the Ga cov- erage, the width of the quantum dash pairs can be tuned from similar to 100 nm to similar to 300 nm while keeping the height in the range of 4 nm to 10 nm. The coverage dependence of quantum dash pairs is also confirmed with photoluminescence measurement. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Type: Article
Title: Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy
DOI: 10.1002/pssr.201206236
Additional information: unique-id: ISI:000306313500013
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1547984
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