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Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment

Li, M-Y; Lee, J; Wang, Z; Hirono, Y; Wu, J; Song, S; Koo, S-M; ... Salamo, GJ; + view all (2012) Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , 209 (6) pp. 1075-1079. 10.1002/pssa.201127692.

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Abstract

A sharp contrast of the density and size of Ga metal droplets (MDs) on strip patterned GaAs (100) is demonstrated through droplet epitaxy (DE) and photolithography technique. As clearly evidenced by scanning electronic microscope (SEM) and atomic force microscope (AFM), MD density between etched (patterned) and un-etched (un-patterned) surfaces can be sharply different up to one order of magnitude under an identical growth condition. Etched surface exhibits much higher density and smaller diameter and height of MDs.

Type: Article
Title: Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment
DOI: 10.1002/pssa.201127692
Additional information: unique-id: ISI:000305122300011
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1547982
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