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Polarization doping: Reservoir effects of the substrate in AlGaN graded layers

Li, S; Ware, ME; Wu, J; Kunets, VP; Hawkridge, M; Minor, P; Wang, Z; ... Salamo, GJ; + view all (2012) Polarization doping: Reservoir effects of the substrate in AlGaN graded layers. JOURNAL OF APPLIED PHYSICS , 112 (5) 10.1063/1.4750039.

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Abstract

High electron sheet concentrations of similar to 10(15) cm(-2) result from polarization doping with compositionally graded AlGaN films grown on unintentionally doped GaN templates which exhibit background electron concentrations of similar to 10(16) cm(-3). Similar graded films grown on semi-insulating (SI), free standing GaN substrates exhibited carrier concentrations two orders less. Transport studies of the as-grown materials using temperature dependent Hall effect revealed a very weak temperature dependence of the carrier concentration and mobility as compared to traditionally doped films using Si as a dopant. And qualitative modeling of the electron mobility indicates that alloy scattering and charged dislocation scattering are the most significant contributors to limiting the mobility over the entire temperature range. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750039]

Type: Article
Title: Polarization doping: Reservoir effects of the substrate in AlGaN graded layers
DOI: 10.1063/1.4750039
Additional information: article-number: 053711 researcherid-numbers: Ware, Morgan/I-8233-2012 orcid-numbers: Ware, Morgan/0000-0002-9998-4139 unique-id: ISI:000309072200070
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1541459
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