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Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

Li, S; Ware, M; Wu, J; Minor, P; Wang, Z; Wu, Z; Jiang, Y; (2012) Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN. APPLIED PHYSICS LETTERS , 101 (12) 10.1063/1.4753993.

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Abstract

We propose a type of pn-junction not formed by impurity-doping, but rather by grading the Al composition in an AlxGa1-xN thin film, resulting in alternating p and n conducting regions due to polarization charge. By linearly grading AlxGa1-xN from 0% to x (x <= 30%) and back to 0% Al, a polarization induced pn-junction is formed, even in the absence of any impurity doping. X-ray diffraction reciprocal space maps are used to determine the strain state of the different graded composition samples. Polarization induced doping also provides a solution to the problem of p-type doping efficiency for III-nitrides. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4753993]

Type: Article
Title: Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
DOI: 10.1063/1.4753993
Additional information: article-number: 122103 researcherid-numbers: Ware, Morgan/I-8233-2012 orcid-numbers: Ware, Morgan/0000-0002-9998-4139 unique-id: ISI:000309425700041
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1541458
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