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Strong interband transitions in InAs quantum dots solar cell

Wu, J; Makableh, YFM; Vasan, R; Manasreh, MO; Liang, B; Reyner, CJ; Huffaker, DL; (2012) Strong interband transitions in InAs quantum dots solar cell. APPLIED PHYSICS LETTERS , 100 (5) 10.1063/1.3681360.

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Abstract

Solar cells fabricated from a stack of ten periods of InAs quantum dots sandwiched in a GaAs p-n junction were fabricated and tested. The 300 K photoresponse spectrum exhibits two strong peaks and several weak peaks related to band-to-band transitions within the quantum dots. A few of these peaks were also observed in the photoluminescence and external quantum efficiency spectra. The power conversion efficiency was obtained from the current-voltage characteristics. Surface plasmon effect on the solar cell was investigated by coupling gold nanoparticles to the surface of the device using dithiol ligands with an enhancement on the order of 10%. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3681360]

Type: Article
Title: Strong interband transitions in InAs quantum dots solar cell
DOI: 10.1063/1.3681360
Additional information: article-number: 051907 unique-id: ISI:000300065300022
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1539802
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