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Application of the Back Gate in MOS Weak Inversion Translinear Circuits

Mulder, J; van der Woerd, AC; Serdijn, WA; van Roermund, AHM; (1995) Application of the Back Gate in MOS Weak Inversion Translinear Circuits. IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications , 42 (11) pp. 958-962. 10.1109/81.477207.

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Abstract

Though the MOS transistor is a four-terminal device, it is most often used as a three-terminal device. Therefore, a large number of possible MOS circuits are overlooked. In this brief, the four-terminal point of view is elaborated with respect to MOS weak inversion translinear circuits, a class of circuits naturally very suitable for low-voltage and low-power applications. Some new circuits are described which sometimes are more suitable for low-voltage applications than bipolar translinear networks performing the same function. It is also shown that, using the back gate, translinear networks can be derived which cannot be realized with bipolar transistors. These network topologies increase the possibilities offered by translinear technology. As an example, measurement results of a low input-voltage current mirror and a sin(x) circuit are shown. © 1995 IEEE.

Type: Article
Title: Application of the Back Gate in MOS Weak Inversion Translinear Circuits
DOI: 10.1109/81.477207
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1528258
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