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Conductive AFM Topography of Intrinsic Conductivity Variations in Silica Based Dielectrics for Memory Applications

Buckwell, M; Zarudnyi, K; Montesi, L; Ng, WH; Hudziak, S; Mehonic, A; Kenyon, AJ; (2016) Conductive AFM Topography of Intrinsic Conductivity Variations in Silica Based Dielectrics for Memory Applications. Presented at: Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 held during the PRiME Joint Int Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society, Honolulu, HI.

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Type: Conference item (UNSPECIFIED)
Title: Conductive AFM Topography of Intrinsic Conductivity Variations in Silica Based Dielectrics for Memory Applications
Event: Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 held during the PRiME Joint Int Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society
Location: Honolulu, HI
Dates: 02 October 2016 - 07 October 2016
DOI: 10.1149/07505.0003ecst
Keywords: Science & Technology, Physical Sciences, Technology, Electrochemistry, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Physics, Condensed Matter, Engineering, Science & Technology - Other Topics, Physics
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1521304
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