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Long-Lived Spin Coherence in Silicon with an Electrical Spin Trap Readout

Morley, GW; McCamey, DR; Seipel, HA; Brunel, LC; van Tol, J; Boehme, C; (2008) Long-Lived Spin Coherence in Silicon with an Electrical Spin Trap Readout. PHYS REV LETT , 101 (20) , Article 207602. 10.1103/PhysRevLett.101.207602. Green open access

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Abstract

Pulsed electrically detected magnetic resonance of phosphorous (P-31) in bulk crystalline silicon at very high magnetic fields (B-0 > 8.5 T) and low temperatures (T=2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (> 95%) conduction electrons by equally highly polarized P-31 donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 mu s, 50 times longer than the previous maximum for electrically detected spin readout experiments.

Type: Article
Title: Long-Lived Spin Coherence in Silicon with an Electrical Spin Trap Readout
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevLett.101.207602
Publisher version: http://dx.doi.org/10.1103/PhysRevLett.101.207602
Language: English
Additional information: © 2008 The American Physical Society
Keywords: SINGLE-ELECTRON, QUANTUM, SEMICONDUCTORS, DONORS, STATES
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/150173
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