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Retention of data in heat-damaged SIM cards and potential recovery methods

Jones, BJ; Kenyon, AJ; (2008) Retention of data in heat-damaged SIM cards and potential recovery methods. FORENSIC SCI INT , 177 (1) 42 - 46. 10.1016/j.forsciint.2007.10.007.

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Abstract

Examination of various SIM cards and smart card devices indicates that data may be retained in SIM card memory structures even after heating to temperatures up to 450 degrees C, which the National Institute of Standards and Technology (NIST) has determined to be approximately the maximum average sustained temperature at desk height in a house fire. However, in many cases, and certainly for temperatures greater than 450 degrees C, the SIM card chip has suffered structural or mechanical damage that renders simple probing or rewiring ineffective. Nevertheless, this has not necessarily affected the data, which is stored as charge in floating gates, and alternative methods for directly accessing the stored charge may be applicable. (c) 2007 Elsevier Ireland Ltd. All rights reserved.

Type: Article
Title: Retention of data in heat-damaged SIM cards and potential recovery methods
DOI: 10.1016/j.forsciint.2007.10.007
Keywords: SIM card, mobile phone, fire, data recovery, scanning probe microscopy, EEPROM, CELL
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/149414
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