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Study of the electroluminescence at 1.5 μm of SiO: Er layers made by reactive magnetron sputtering

Jambois, O; Berencen, Y; Seo, S-Y; Garrido, B; Kenyon, AJ; Wojdak, M; ... Rizk, R; + view all (2009) Study of the electroluminescence at 1.5 μm of SiO: Er layers made by reactive magnetron sputtering. In: Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09. (pp. 69 - 72).

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Abstract

We have studied the current transport and electroluminescence mechanisms of four layers of Si oxide co-doped with Si nanoclusters and erbium ions. Electrical measurements have identified different conduction mechanisms in separate high-field and low-field regimes, including Poole-Frenkel hopping. In particular, hopping through the Si-ncl is evidenced by C-V measurements. We have also observed an important contribution of defects from the oxide in the conduction, and no evidence of Fowler-Nordheim tunnelling. The results suggest that the electroluminescence from erbium ions in silicon-rich silicon dioxide is generated by electrons transported through the active layer by hopping from localised states, which we associate with silicon nanoclusters. © 2009 IEEE.

Type:Proceedings paper
Title:Study of the electroluminescence at 1.5 μm of SiO: Er layers made by reactive magnetron sputtering
DOI:10.1109/SCED.2009.4800432
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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