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Boron incorporation issues in diamond when TMB is used as extreme doping levels

Volpe, P-N; Arnault, J-C; Tranchant, N; Chicot, G; Pernot, J; Jomard, F; Bergonzo, P; (2012) Boron incorporation issues in diamond when TMB is used as extreme doping levels. DIAMOND AND RELATED MATERIALS , 22 pp. 136-141. 10.1016/j.diamond.2011.12.019.

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Type: Article
Title: Boron incorporation issues in diamond when TMB is used as extreme doping levels
DOI: 10.1016/j.diamond.2011.12.019
Keywords: Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, Diamond, Growth, Doping, TMB, Oxygen, CHEMICAL-VAPOR-DEPOSITION, SCHOTTKY DIODES, THIN-FILMS, OXYGEN, CATHODOLUMINESCENCE, SPECTROSCOPY, QUALITY, GROWTH, CVD, LENGTH
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1490553
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