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Excited state absorption in the Si nanocluster-Er material system

Loh, WH; Kenyon, AJ; (2006) Excited state absorption in the Si nanocluster-Er material system. IEEE Photonics Technology Letters , 18 (1-4) 289 - 291. 10.1109/LPT.2005.861266. Green open access

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Abstract

The issue of Er3+ excited state absorption in the Si nanocluster-Er material system is highlighted, and an analysis incorporating this interaction presented. We compare our analysis with a prior model of this material, and with regard to previously reported photoluminescence behavior. We show that excited state absorption can explain behavior that has previously been observed, but had not been satisfactorily accounted for.

Type: Article
Title: Excited state absorption in the Si nanocluster-Er material system
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/LPT.2005.861266
Publisher version: http://dx.doi.org/10.1109/LPT.2005.861266
Language: English
Additional information: © 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: erbium, optical amplifier, silicon nanocrystal, 1.54 MU-M, SILICON-RICH SILICA, ENERGY-TRANSFER, OPTICAL GAIN, WAVE-GUIDE, NANOCRYSTALS, PHOTOLUMINESCENCE, LUMINESCENCE, EXCITATION, SIO2-FILMS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/148840
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