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Single-domain epitaxial silicene on diboride thin films

Hirjibehedin, CF; Fleurence, A; Gill, TG; Friedlein, R; Sadowski, JT; Aoyagi, K; Copel, M; ... Yamada-Takamura, Y; + view all (2016) Single-domain epitaxial silicene on diboride thin films. Applied Physics Letters , 108 , Article 151902. 10.1063/1.4945370. Green open access

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Abstract

Epitaxial silicene, which forms spontaneously on ZrB2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. The realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.

Type: Article
Title: Single-domain epitaxial silicene on diboride thin films
Open access status: An open access version is available from UCL Discovery
DOI: 10.1063/1.4945370
Publisher version: http://dx.doi.org/10.1063/1.4945370
Language: English
Additional information: Copyright 2016 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract).
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1478279
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