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Nanosecond analog programming of substoichiometric silicon oxide resistive RAM

Montesi, L; Buckwell, M; Zarudnyi, K; Garnett, L; Hudziak, S; Mehonic, A; Kenyon, AJ; (2016) Nanosecond analog programming of substoichiometric silicon oxide resistive RAM. IEEE Transactions on Nanotechnology , 15 (3) pp. 428-434. 10.1109/TNANO.2016.2539925. Green open access

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Abstract

Slow access time, high power dissipation and a rapidly approaching scaling limit constitute roadblocks for existing non-volatile flash memory technologies. A new family of storage devices is needed. Filamentary resistive RAM (ReRAM) offers scalability, potentially sub-10nm, nanosecond write times and a low power profile. Importantly, applications beyond binary memories are also possible. Here we look at aspects of the electrical response to nanosecond stimuli of intrinsic resistance switching TiN/SiOx/TiN ReRAM devices. Simple sequences of identical pulses switch devices between two or more states, leading to the possibility of simplified programmers. Impedance mismatch between the device under test and the measurement system allows us to track the electroforming process and confirm it occurs on the nanosecond timescale. Furthermore, we report behavior reminiscent of neuronal synapses (potentiation, depression and short-term memory). Our devices therefore show great potential for integration into novel hardware neural networks.

Type: Article
Title: Nanosecond analog programming of substoichiometric silicon oxide resistive RAM
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/TNANO.2016.2539925
Publisher version: http://dx.doi.org/10.1109/TNANO.2016.2539925
Language: English
Additional information: Copyright © IEEE 2016.This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Nanotechnology, analog memories, dielectric materials, memories, neural network hardware, pulse measurements, resistance switching, silicon compounds, titanium compounds
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1476492
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